Microwave microscopy of diamond semiconductor structures
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-04-28 |
| Journal | Journal of Applied Physics |
| Authors | A. N. Reznik, S. A. Korolyov, Š. Š. ŠŃŠ¾Š·Š“Š¾Š² |
| Institutions | Institute for Physics of Microstructures |
| Citations | 8 |
Abstract
Section titled āAbstractāA scanning near-field microwave microscope (SNMM) was used to study resistance Rsh of a boron delta-doped epilayer of diamond grown on a high pressure and high temperature substrate. Measurements were performed with an ā¼1.4 GHz working frequency and an ā¼85 Ī¼m space resolution microscope on samples with a lateral dimension of 3 Ć 3 mm2. Some substrates featured a crystalline structure defect over which the epilayer resistance Rsh was seen to increase by more than an order of ā¼1 mm linear dimensions of the high-ohmic region. The SNMM measurement data revealed some substrates to have nonuniform conductivity, i.e., a high-ohmic area in the central part surrounded by a conducting edge region. In the latter case, the SNMM method allowed determining a surface distribution of epilayer resistance Rsh, undistorted by the shunting influence of the substrate. The reliability of the SNMM results is confirmed by the local four-probe resistance measurements. At the same time, the alternative methods such as the non-local van der Pauw method and secondary ion mass spectroscopy failed to detect the nonuniformity of the structure conducting properties, established by SNMM. The obtained values for a hole concentration of Np ā 1.7 Ć 1020 cmā3 and a mobility of Ī¼H ā 15 cm2/(V s) are assumed to possibly pertain to the diamond delta-layer.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2007 - Principles of near-field microwave microscopy [Crossref]