Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-05-15 |
| Journal | Applied Physics Express |
| Authors | Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Mitsuaki Shimizu |
| Institutions | National Institute of Advanced Industrial Science and Technology, Fuji Electric (Japan) |
| Citations | 86 |
Abstract
Section titled âAbstractâThe photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the near-band-edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN:Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (VGa)m(VN)n, as well as to inhibit p-type conductivity.