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6CCVD Research

Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2021-02-22
JournalApplied Physics Letters
AuthorsRussell E. Lake, Arun Persaud, Casey Christian, Edward S. Barnard, Emory M. Chan
InstitutionsNational University of Singapore, GSI Helmholtz Centre for Heavy Ion Research
Citations12

Abstract

Section titled ā€œAbstractā€

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NVāˆ’) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NVāˆ’ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to the formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30-Ī¼m-long percolation chains.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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