Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-05-01 |
| Journal | Russian Microelectronics |
| Authors | Н. В. Щаврук, S. V. Redkin, А. А. Трофимов, Наталья Евгеньевна Иванова, A. S. Skripnichenko |
| Institutions | Moscow Technological Institute, Institute of Superhigh-Frequency Semiconductor Electronics of the Russian Academy of Sciences |
Abstract
Section titled “Abstract”The works on the partitioning of very hard semiconductor sapphire wafers with a diameter of 52 mm and thickness of 90 μm into monolithic integrated circuits (MICs) have been carried out using lasercontrolled thermal cleavage (LCT). The studies have been carried out and the works on cutting polycrystalline diamond wafers have been performed, as a result of which a method to partition the wafers into crystals, i.e., the laser plasmochemical method of cutting, is proposed, the basic advantage of which is the absence of the material bursting out from the cutting region and its deposition onto already formed device structures.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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- 2016 - State Registration Certificate