A TCAD modeling approach for diamond particle detectors - Simulation and test
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-06-01 |
| Authors | A. Morozzi, D. Passeri |
| Institutions | Istituto Nazionale di Fisica Nucleare, Sezione di Perugia |
| Citations | 1 |
Abstract
Section titled âAbstractâIn order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is not included in the materialâs library of commercial TCAD simulation tools, due to the novelty of using this material in electronics. To this end the TCAD tools capabilities have been enhanced by developing an innovative numerical model for the simulations of advanced diamond devices conceived for particle detection in High-Energy Physics (HEP) experiments. This work focuses on the parameterization of the TCAD numerical model for polycrystalline diamond, on its validation against experimental data and on its application as a predictive tool for the electrical behavior of commercial polycrystalline diamond and Diamond-on-Iridium detectors.