Characterization of silicon carbide and diamond detectors for neutron applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-07-13 |
| Journal | Measurement Science and Technology |
| Authors | M. Hodgson, A. Lohstroh, P.J. Sellin, David Thomas |
| Institutions | University of Surrey |
| Citations | 21 |
Abstract
Section titled āAbstractāThe presence of carbon atoms in silicon carbide and diamond makes these materials ideal candidates for direct fast neutron detectors. Furthermore the low atomic number, strong covalent bonds, high displacement energies, wide bandgap and low intrinsic carrier concentrations make these semiconductor detectors potentially suitable for applications where rugged, high-temperature, low-gamma-sensitivity detectors are required, such as active interrogation, electronic personal neutron dosimetry and harsh environment detectors.