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6CCVD Research

Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-08-01
AuthorsVinicius Vono Peruzzi, Christian Renaux, Denis Flandre, Salvador Pinillos Gimenez
InstitutionsUCLouvain, Centro UniversitƔrio FEI
Citations2

Abstract

Section titled ā€œAbstractā€

On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with Ī± angles equal to 53.1Ā° and 90Ā° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Invited paper: Innovative Layout Styles to Boost the Mosfet Electrical Performance

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