Annealing effects on hydrogenated diamond NOR logic circuits
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-04-09 |
| Journal | Applied Physics Letters |
| Authors | Jiangwei Liu, Hirotaka Oosato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe |
| Institutions | National Institute for Materials Science |
| Citations | 20 |
Abstract
Section titled “Abstract”Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are −10.0 V and “high” signals, output voltages respond 0 V and “low” signals. Instead, when both input voltages are 0 V and “low” signals, output voltage responds −10.0 V and a “high” signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.