Neutral Silicon-Vacancy Center in Diamond - Spin Polarization and Lifetimes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-08-31 |
| Journal | Physical Review Letters |
| Authors | Ben L. Green, Sinead Mottishaw, Ben G. Breeze, A. M. Edmonds, Ulrika F. S. DāHaenens-Johansson |
| Institutions | Gemological Institute of America, Element Six (United Kingdom) |
| Citations | 73 |
Abstract
Section titled āAbstractāWe demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 Ī¼s at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.