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6CCVD Research

Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-09-11
JournalApplied Physics Letters
AuthorsMoshe Tordjman, Kamira Weinfeld, R. Kalish
InstitutionsTechnion ā€“ Israel Institute of Technology
Citations61

Abstract

Section titled ā€œAbstractā€

An advanced charge-transfer yield is demonstrated by employing single monolayers of transition-metal oxidesā€”tungsten trioxide (WO3) and rhenium trioxide (ReO3)ā€”deposited on the hydrogenated diamond surface, resulting in improved p-type sheet conductivity and thermal stability. Surface conductivities, as determined by Hall effect measurements as a function of temperature for WO3, yield a record sheet hole carrier concentration value of up to 2.52 Ɨ 1014 cmāˆ’2 at room temperature for only a few monolayers of coverage. Transfer doping with ReO3 exhibits a consistent narrow sheet carrier concentration value of around 3 Ɨ 1013 cmāˆ’2, exhibiting a thermal stability of up to 450 Ā°C. This enhanced conductivity and temperature robustness exceed those reported for previously exposed surface electron acceptor materials used so far on a diamond surface. X-ray photoelectron spectroscopy measurements of the C1s core level shift as a function of WO3 and ReO3 layer thicknesses are used to determine the respective increase in surface band bending of the accumulation layers, leading to a different sub-surface two-dimensional hole gas formation efficiency in both cases. This substantial difference in charge-exchange efficiency is unexpected since both surface acceptors have very close work functions. Consequently, these results lead us to consider additional factors influencing the transfer doping mechanism. Transfer doping with WO3 reveals the highest yet reported transfer doping efficiency per minimal surface acceptor coverage. This improved surface conductivity performance and thermal stability will promote the realization of 2D diamond-based electronic devices facing process fabrication challenges.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2009 - CVD Diamond for Electronic Devices

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