Electrophysical parameters of Au-Ti ohmic contacts to polycrystalline diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-09-01 |
| Authors | Maksym Dub |
| Institutions | V.E. Lashkaryov Institute of Semiconductor Physics |
| Citations | 2 |
Abstract
Section titled āAbstractāOhmic contacts to polycrystalline diamond thin films were formed using Au-Ti metal structure. The current-voltage characteristics of all contacts are linear and symmetric. Measured values of contact resistivity are less than 1 % of semiconductor resistivity. Essential variation of electrophysical parameters was not observed after rapid thermal annealing at 800 Ā°C with 60 seconds duration. The thermionic emission was determined as dominant current transport mechanism through metal-diamond interface at temperatures above 190 K. The structure study was conducted by Auger profiling and X-ray diffraction analysis. The ability of using such type of ohmic contacts as temperature detectors on heat sink was discussed.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1991 - Interface reactions of titanium on single crystal and thin film diamond analyzed by UV photoemission spectroscopy