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6CCVD Research

Comparative Study of Phase Transformation in Single-Crystal Germanium during Single and Cyclic Nanoindentation

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-11-01
JournalCrystals
AuthorsKoji Kosai, Hu Huang, Jiwang Yan
InstitutionsKeio University
Citations9

Abstract

Section titled ā€œAbstractā€

Single-crystal germanium is a semiconductor material which shows complicated phase transformation under high pressure. In this study, new insight into the phase transformation of diamond-cubic germanium (dc-Ge) was attempted by controlled cyclic nanoindentation combined with Raman spectroscopic analysis. Phase transformation from dc-Ge to rhombohedral phase (r8-Ge) was experimentally confirmed for both single and cyclic nanoindentation under high loading/unloading rates. However, compared to single indentation, double cyclic indentation with a low holding load between the cycles caused more frequent phase transformation events. Double cyclic indentation caused more stress in Ge than single indentation and increased the possibility of phase transformation. With increase in the holding load, the number of phase transformation events decreased and finally became less than that under single indentation. This phenomenon was possibly caused by defect nucleation and shear accumulation during the holding process, which were promoted by a high holding load. The defect nucleation suppressed the phase transformation from dc-Ge to r8-Ge, and shear accumulation led to another phase transformation pathway, respectively. A high holding load promoted these two phenomena, and thus decreased the possibility of phase transformation from dc-Ge to r8-Ge.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1963 - Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium [Crossref]
  2. 1962 - Pressure Induced Phase Transitions in Silicon, Germanium and Some III-V Compounds [Crossref]
  3. 1978 - Indentation Hardness and Semiconductor-Metal Transition of Germanium and Silicon [Crossref]
  4. 1992 - Electrical Resistance of Metallic Contacts on Silicon and Germanium during Indentation [Crossref]
  5. 1993 - Stability and Crystal Structure of BC8 Germanium [Crossref]
  6. 1999 - Raman Microspectroscopy of Nanocrystalline and Amorphous Phases in Hardness Indentations [Crossref]
  7. 2014 - Controlled Formation of Metastable Germanium Polymorphs [Crossref]
  8. 2009 - Rate-Dependent Phase Transformations in Nanoindented Germanium [Crossref]
  9. 2013 - Evidence for the R8 Phase of Germanium [Crossref]
  10. 2017 - Cold Nanoindentation of Germanium [Crossref]

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