Gen3 embedded cooling for high power RF components
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-11-01 |
| Journal | 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) |
| Authors | Avram BarâCohen, Joseph Maurer, David Altman |
| Institutions | RTX (United States) |
| Citations | 15 |
Abstract
Section titled âAbstractâNear-junction thermal barriers severely limit the inherent capability of high-quality wide bandgap materials and architectures and necessitate the development of an alternative, Gen3, thermal management paradigm to reach the goals of future high-power RF applications. Recent Gen3 âembedded coolingâ efforts in the aerospace industry have focused on reduction of this near-junction thermal resistance, through the use of diamond substrates and efficient removal of the dissipated power with on-chip convective and jet impingement microfluidics. The options, challenges, and techniques associated with the development of embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power amplifiers.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
Section titled âReferencesâ- 2016 - Impingement Cooled Embeddd Diamond Multi-Physics Co-Design
- 2015 - Impingement Cooled Embedded Diamond (ICED) GaN HEMTs
- 2015 - Cool It! Heat relief for RF power chips
- 2017 - Advanced Thermal Solutions for GaN RF Electronics
- 2010 - Highly Integrated 8×8 Antenna Array Demonstrator on LTCC with Integrated RF Circuitry and Liquid Cooling