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Влияние бора на структуру и проводимость тонких пленок, получаемых лазерной абляцией алмаза при 700-=SUP=-o-=/SUP=-C

MetadataDetails
Publication Date2018-01-01
JournalПисьма в журнал технической физики
AuthorsР.И. Романов, В.Ю. Фоминский, Pavel V. Zinin, И.А. Троян, Д.В. Фоминский

AbstractStructural features of CB_ x films obtained by pulsed laser ablation of targets made of pressed diamond powder with boron-powder additions at B/C atomic ratio of x = 0.33 have been studied. The films were deposited on heated substrates, so that diffusion processes involving C and B atoms on the surface and in the volume of films were possible. Selected conditions of film deposition ensured their effective doping with boron (0.4 ≤ x ≤ 0.6). The incorporation of B atoms was accompanied by the formation of B-C chemical bonds, whereas the formation of sp ^2 graphite bonds and their ordering in clusters with laminar packing was suppressed. The films possessed very low resistivity (~1.4 mΩ cm) at room temperature and exhibited metallic type of conductance on decreasing the temperature to 77 K.