Relaxation effects in a composite on the basis of trikadmy diarsenide at high pressure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-01-01 |
| Journal | HERALD of Dagestan State University |
| Authors | Nataliya V. Melnikova, L. A. Saipulaeva, Š. Š. ŠŠ»ŠøŠ±ŠµŠŗŠ¾Š², M. M. Gadzhialiev, V.S. Zakhvalinsky |
| Institutions | NS Kurnakova Institute of General and Inorganic Chemistry, Dagestan Scientific Center of the Russian Academy of Sciences |
Abstract
Section titled āAbstractāThe article studies the pressure behavior of the electrical resistance and thermopower in a wide range of pressures (up to 50 GPa) at room temperature and relaxation effects arising during the formation of new phases are investigated.The object of research was the composite tricadmiumdiarsenide -manganese arsenide consisting of granules of ferromagnetic MnAs, placed in a semiconductor matrix tricadmiumdiarsenide.To create quasi-hydrostatic pressures, a high-pressure chamber with diamond anvils of the ārounded cone-planeā type was used.To create a temperature gradient, one of the anvils was heated; the temperature of the anvils at the contact points was measured by two copperconstantan thermocouples.The analysis of the dependence of the relaxation time in the electrical resistivity on pressure made it possible to establish that under the interval of 30-33 GPa a significant increase in the relaxation time of the electrical resistivity due to a possible structural or electronic phase transition is observed.