Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-01-01 |
| Journal | ECS Journal of Solid State Science and Technology |
| Authors | Jiaxin Yao, Huaxiang Yin, Zhenhua Wu, Jianfeng Gao, Qingzhu Zhang |
| Institutions | Institute of Microelectronics, University of Chinese Academy of Sciences |
| Citations | 8 |
Abstract
Section titled âAbstractâThis paper presents a comparative investigation of flatband voltage (VFB) adjustment scheme with the nitrogen plasma treatment (NPT) in the high-k/metal-gate (HKMG) Metal-Oxide-Semiconductor Capacitor (MOSCAP) for scaling of the further CMOS fabrication technology. The NPT process on the first ALD-TiN capping layer demonstrates significant VFB modulation capability and causes a controllable effective gate work function in metal-gate: 1) shifting to band center with the increasing of RF powers both for P-/N-MOSCAPs; 2) shifting to opposite directions (P- to band edge, N- to band center) with reduced nitrogen flow ratio for P-/N-MOSCAPs; 3) shifting from â220mV to +60mV and from +130mV to +420mV for P-/N-MOSCAPs, respectively. One unique theoretical model including N-vacancy/Al-trap effect is successfully proposed to illustrate the complicated shift behaviors both for HKMG P-/N-MOSCAPs. The demonstrated process results and the physical model indicate that the advanced NPT technology is a simple, effective and CMOS-compatible method for both P-/N-logic devices scaling beyond 7nm technology node.