Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-01-24 |
| Journal | Advanced Materials |
| Authors | Ling Xie, Tony Zhou, Rainer Stöhr, Amir Yacoby |
| Institutions | University of Stuttgart, NanoScale Corporation (United States) |
| Citations | 53 |
Abstract
Section titled âAbstractâAbstract Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes to be formed and has significant impacts on microelectromechanical systems (MEMS), atomic force microscopy (AFM), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively coupled plasma reactive ion etcher is presented, which selectively reveals desired crystal planes in monocrystalline diamond by controlling the etching conditions. Using this principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a halfâtapering angle up to 21° is achieved, the highest angle reported in the literature, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of a crystallographic orientation dependent reactive ion etching principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for the structuring and patterning of other single crystal materials as well.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
Section titled âReferencesâ- 2006 - MEMS: Design and Fabrication