Seeded growth of boron arsenide single crystals with high thermal conductivity
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-01-15 |
| Journal | Applied Physics Letters |
| Authors | Fei Tian, Bai Song, Bing Lv, Jingying Sun, Shuyuan Huyan |
| Institutions | University of Houston, The University of Texas at Dallas |
| Citations | 53 |
Abstract
Section titled āAbstractāMaterials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W mā1 Kā1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W mā1 Kā1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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