High pressure photoluminescence studies of diamond with GeV centers
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-02-12 |
| Journal | Nanosystems Physics Chemistry Mathematics |
| Authors | S. G. Lyapin, A.A. Razgulov, А. П. Новиков, Е. А. Екимов, M. V. Kondrin |
| Institutions | Moscow Institute of Physics and Technology, Institute for High Pressure Physics |
| Citations | 8 |
Abstract
Section titled “Abstract”We report low temperature (80 K) photoluminescence studies of microcrystalline diamond with germanium-vacancy (GeV) centers under hydrostatic pressure up to 6 GPa.Powders of Ge-doped diamond crystals were synthesized from hydrocarbons at high-pressures and hightemperatures.Due to the high quality of the samples, we were able to resolve the distinct quadruplet structure of the zero-phonon line (ZPL) of the GeV center already at 80 K and to trace it up to ∼ 6 GPa.The pressure dependence of ZPL was found to be linear with the pressure coefficient dE/dP = 3.1 meV/GPa, which is nearly 3 times higher than that for the isomorphic SiV -center.The experimentally observed pressure coefficients of GeV -, NV -and NV 0 centers are compared with results of ab-initio DFT calculations, using Quantum ESPRESSO software package.