Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-02-12 |
| Journal | IEEE Electron Device Letters |
| Authors | Maitreya Dutta, Saptarshi Mandal, Raghuraj Hathwar, Alec M. Fischer, Franz A. Koeck |
| Institutions | University of California, Davis, Arizona State University |
| Citations | 12 |
Abstract
Section titled āAbstractāThe extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)- oriented diamond is presented here using the diode reverse recovery method. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during the measurement. The minority carrier lifetime of holes was measured to be ~6 ns. The results obtained were compared to p-i-n diodes on (100)- where the n-side was fully depleted. The storage time delay was found to be negligible in the (100)- case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2006 - Junctions
- 2017 - Diamond power electronic devices enabled by phosphorus doped diamond