A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-01 |
| Journal | Chinese Physics Letters |
| Authors | Zhanbin Bai, Xiangkai Liu, Zhen Lian, Kangkang Zhang, Guanghou Wang |
| Institutions | Rensselaer Polytechnic Institute, Nanjing University |
| Citations | 24 |
Abstract
Section titled āAbstractāWe demonstrate the fabrication of a single electron transistor device based\non a single ultra-small silicon quantum dot connected to a gold break junction\nwith a nanometer scale separation. The gold break junction is created through a\ncontrollable electromigration process and the individual silicon quantum dot in\nthe junction is determined to be a Si_170 cluster. Differential conductance as\na function of the bias and gate voltage clearly shows the Coulomb diamond which\nconfirms that the transport is dominated by a single silicon quantum dot. It is\nfound that the charging energy can be as large as 300meV, which is a result of\nthe large capacitance of a small silicon quantum dot (1.8 nm). This large\nCoulomb interaction can potentially enable a single electron transistor to work\nat room temperature. The level spacing of the excited state can be as large as\n10 meV, which enables us to manipulate individual spin via an external magnetic\nfield. The resulting Zeeman splitting is measured and the lande factor of 2.3\nis obtained, suggesting relatively weak electron-electron interaction in the\nsilicon quantum dot which is beneficial for spin coherence time.\n