Engineering of Fermi level by nin diamond junction for control of charge states of NV centers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-12 |
| Journal | Applied Physics Letters |
| Authors | Takuya Murai, Toshiharu Makino, Hiromitsu Kato, M. Shimizu, Takuya Murooka |
| Institutions | Tokyo University of Science, National Institute of Advanced Industrial Science and Technology |
| Citations | 30 |
Abstract
Section titled āAbstractāThe charge-state control of nitrogen-vacancy (NV) centers in diamond is very important toward its applications because the NV centers undergo stochastic charge-state transitions between the negative charge state (NVā) and the neutral charge state (NV0) of the NV center upon illumination. In this letter, engineering of the Fermi level by a nin diamond junction was demonstrated for the control of the charge state of the NV centers in the intrinsic (i) layer region. By changing the size (d) of the i-layer region between the phosphorus-doped n-type layer regions (nin) from 2 Ī¼m to 10 Ī¼m, we realized the gradual change in the NVā charge-state population in the i-layer region from 60% to 80% under 532 nm excitation, which can be attributed to the band bending in the i-layer region. Also, we quantitatively simulated the changes in the Fermi level in the i-layer region depending on d with various concentrations of impurities in the i-layer region.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2008 - Nanoscale magnetic sensing with an individual electronic spin in diamond [Crossref]