Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-02 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Seiya Mizoguchi, Naoki Shimatani, Mizuki Kobayashi, Takaomi Makino, Yu Yamaoka |
| Institutions | Tokyo Institute of Technology |
| Citations | 1 |
Abstract
Section titled āAbstractāWe study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ā¼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ā¼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.