Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-12-16 |
| Journal | Applied Physics Letters |
| Authors | Takaya Abe, Motoya Shinozaki, Kimiyoshi Matsumura, Takumi Aizawa, Takeshi Kumasaka |
| Institutions | RIKEN Center for Emergent Matter Science, Advanced Institute of Materials Science |
Abstract
Section titled āAbstractāGaN is expected to be a key material for next-generation electronics due to its interesting properties. However, current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation of quantum dots in GaN FETs under current collapse. By comparing the Coulomb diamond between standard measurements and those under current collapse, we find that the gate capacitance is significantly decreased under current collapse. This suggests that the current collapse changes the distribution of trapped electrons at the device surface, as reported in the previous study by operando x-ray spectroscopy. In addition, we show external control of quantum dot formation, previously challenging in an FET structure, by using current collapse.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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