(Invited) GaN-on-Diamond RF Transistors - The Next Generation Electronics
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-04-13 |
| Journal | ECS Meeting Abstracts |
| Authors | Martin Kuball, James W. Pomeroy, Michael J. Uren |
| Institutions | University of Bristol |
Abstract
Section titled “Abstract”Current GaN-on-SiC RF electronic devices, although they already deliver outstanding performances are limited in power density mainly by the SiC substrate thermal conductivity. Integration of GaN with the highest thermal conductivity material known to mankind, diamond, offers the potential to increase power density in GaN devices by at least a factor of 5. State-of-the-art and current challenges will be discussed.