New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-04-01 |
| Journal | Technical Physics Letters |
| Authors | Š. Š. ŠŃŠ¾Š·Š“Š¾Š², Yu. N. Drozdov, M. A. Lobaev, P. A. Yunin |
| Institutions | Institute for Physics of Microstructures, Institute of Applied Physics |
| Citations | 1 |
Abstract
Section titled āAbstractāA new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary- ion mass spectrometers with time-of-flight mass analyzers is proposed. Along with the known boron-containing lines (B, BC, BC2), many lines related to cluster secondary ions BC N have been found in the mass spectrum; their intensity increases by one or two orders of magnitude when Bi3 probe ions are used. Lines BC4, BC6, BC2, and BC8 have the highest intensity (in the descending order); when they are summed, the sensitivity increases by an order of magnitude in comparison with the known mode of detecting BC2. The parameters of the boron Ī“-layer in single-crystal diamond films grown under optimal conditions have been measured to be unprecedented: the Ī“-layer width is about 2 nm, and the concentration is 6.4 Ć 1020 cm-3 (the boron concentrations for doped and undoped diamonds differ by four orders of magnitude).