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6CCVD Research

P-i-N and Schottky P-i-N diamond diodes for high power limiters

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-02-05
JournalApplied Physics Letters
AuthorsHarshad Surdi, Mason Bressler, Mohammad Faizan Ahmad, Franz A. Koeck, Bryce Winters
InstitutionsNorthrop Grumman (United States), Arizona State University
Citations12

Abstract

Section titled ā€œAbstractā€

P-i-N and Schottky P-i-N diamond diodes are a promising technology for high-power limiters. Receivers, solid-state amplifiers, and detectors commonly use P-i-N and/or Schottky diodes for protection from high power incident signals. Here, we report on the RF power handling and power dissipation capability of diamond P-i-N and Schottky P-i-N diodes. We fabricate P-i-N diodes as vertical structures, with both majority and minority carriers involved in charge transport. Similarly, we fabricate vertical Schottky P-i-N diodes, with the doping in the n-layer reduced compared to P-i-N diodes such that the n-layer becomes fully depleted during operation, resulting in a majority-carrier device with a fast recovery time. Both P-i-N and Schottky P-i-N diodes were packaged in shunt-configuration and matched for 3 GHz operation, with a small signal insertion loss of āˆ¼1.25 dB. P-i-N diodes operated up to 40 dBm before failing nondestructively at 45 dBm, demonstrating power dissipation handling that exceeds that of commercially available Si P-i-N diodes by more than a factor of five. Schottky P-i-N diodes operated up to 49 dBm before non-recoverable failure at 50 dBm.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2002 - High carrier mobility in single-crystal plasma-deposited diamond [Crossref]
  2. 2019 - Diamond power devices: State of the art, modelling, figures of merit and future perspective [Crossref]
  3. 1997 - Receiver protectors: A technology update
  4. 2019 - Microwave limiters
  5. 2005 - Microwave limiters
  6. 1999 - Designing high-power limiter circuits with GaAs PIN diodes
  7. 2000 - The power handling capability of larger power microwave active limiter
  8. 2018 - Ultrawide-bandgap semiconductors: Research opportunities and challenges [Crossref]

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