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Thermal conductivity measurement of diamond and β-Ga<inf>2</inf>O<inf>3</inf> thin films by a 3ω method

MetadataDetails
Publication Date2018-04-01
AuthorsShinichiro Suzuki, Shinya Ohmagari, Yusuke Akutsu, Naoki Okamoto, Takeyasu Saito
InstitutionsOsaka Prefecture University, National Institute of Advanced Industrial Science and Technology

Ga <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> , is one of the promising candidates as wide bandgap material, having potential advantage over SiC and GaN. The low thermal conductivity of Ga <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> is a major drawback, however, there are not much reports for thermal conductivity measurement for Ga <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> thin films. In this study, the thermal conductivity of a single-crystal and polycrystalline diamond and a single-crystal β-Ga <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> [-201] free-standing substrate was evaluated by the 3ω method. 23.3, 1810, and 1380 W/m-K, were obtained as thermal conductivity of β-Ga <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> [-201], Ila-type single crystal diamond, and polycrystalline diamond, respectively.

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