Strain engineering of the silicon-vacancy center in diamond
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-05-29 |
| Journal | Physical review. B./Physical review. B |
| Authors | Srujan Meesala, Young-Ik Sohn, Benjamin Pingault, Linbo Shao, Haig A. Atikian |
| Institutions | California Institute of Technology, Harvard University |
| Citations | 266 |
Abstract
Section titled âAbstractâWe control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.