(Invited) Room Temperature Wafer Bonding of Wide Bandgap Semiconductors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-07-20 |
| Journal | ECS Transactions |
| Authors | Fengwen Mu, Yinghui Wang, Tadatomo Suga |
| Institutions | University of Chinese Academy of Sciences, The University of Tokyo |
| Citations | 3 |
Abstract
Section titled āAbstractāIn this work, wafer bonding of wide bandgap semiconductor of SiC and GaN were accomplished by different surface activated bonding (SAB) methods at room temperature. For SiC wafer bonding, room temperature SiC-SiC, SiC-Si and SiC-SiO2 bonding by three kinds of SAB methods (standard SAB, Modified SAB with Si-containing Ar-beam, and Modified SAB with Si-sputtering layer) have been investigated and compared. For GaN wafer bonding, standard SAB was applied to the direct wafer bonding of GaN-Si at room temperature and modified SAB with Si-sputtering layer was employed for the bonding of GaN-diamond at room temperature. For both of the SiC bonding and GaN bonding, the bonding mechanisms were analyzed. The results of this research indicate SAB should be a promising method for the low temperature bonding of wide bandgap semiconductors.