Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-07-18 |
| Journal | IEEE Electron Device Letters |
| Authors | David A. Macdonald, Kevin G. Crawford, Alexandre Tallaire, Riadh Issaoui, David A. J. Moran |
| Institutions | University of Glasgow, Université Sorbonne Paris Nord |
| Citations | 20 |
Abstract
Section titled âAbstractâWe report on the performance enhancement of 250 nm gate-length H-diamond FETs through thermal treatment of devices at 400°C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is found to increase the transfer doping efficiency and reduce device access resistance. A reduction in ohmic contact resistance and channel resistance beneath the gate after thermal treatment at 400°C was found to further reduce device onresistance and increase the maximum drain current and peak transconductance. These devices demonstrate the highest drain current (375 mA/mm) and transconductance (98 mS/mm) yet reported for H-diamond FETs of this gate length that incorporate an electron acceptor oxide layer.