A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{text{T}}}/{f}_{max}$ of 70/80 GHz
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-08-01 |
| Journal | IEEE Electron Device Letters |
| Authors | Xinxin Yu, Jianjun Zhou, Chengjun Qi, Zhengyi Cao, Yuechan Kong |
| Institutions | Tianjin Synthetic Material Research Institute (China) |
| Citations | 123 |
Abstract
Section titled “Abstract”A high frequency hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistor (MISFET) with extremely small source-drain distance of about 350 nm was realized by self-aligned process on (001)-oriented single crystal diamond substrate. To suppress the gate leakage current, a low temperature Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> film was deposited as the gate insulator by inductance coupled plasma enhanced atomic layer deposition. A low ohmic contact resistance of 1.84 Q·mm was measured by using transmission line method. The fabricated 100 nm gate length MISFET shows a high current density of 585 mA/mm and a high transconductance of 206 mS/mm. By minimizing the parasitic parameters of the device, a high current gain cut-off frequency f <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>T</sub> of 70 GHz and maximum frequency of oscillation f <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>max</sub> of 80 GHz have been realized.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2014 - High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3 [Crossref]