Diamond photovoltaic radiation sensor using pn junction
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-08-27 |
| Journal | Applied Physics Letters |
| Authors | Takehiro Shimaoka, Satoshi Koizumi, M. Tanaka |
| Institutions | High Energy Accelerator Research Organization, National Institute for Materials Science |
| Citations | 9 |
Abstract
Section titled āAbstractāBecause of its heat resistance and radiation hardness, diamond is a suitable semiconductor material for use in radiation sensors operating under harsh environments. To date, diamond radiation sensor designs have been constrained to Metal-Insulator-Metal structures. Instead of this structure, the pn junction offers several advantages for radiation sensors such as high built-in bias, electric field control, and depletion layer thickness control through doping profile design. We formed diamond pn diodes with ideal electric properties. A large built-in bias of 4.7 eV was obtained. The diode represented less than 10ā11 A of low leakage current up to nearly 1 MV/cm of a high electric field. We detected alpha particles at zero-bias voltage using the pn diode, which opens the possibility of realizing compact radiation sensors.