Using Statistical Student’s t-Test to Qualify the Electrical Performance of the Diamond MOSFETs
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-08-01 |
| Authors | Vinicius Vono Peruzzi, Gabriel Augusto da Silva, Christian Renaux, Denis Flandre, Salvador Pinillos Gimenez |
| Institutions | UCLouvain, Centro Universitário FEI |
| Citations | 6 |
Abstract
Section titled “Abstract”This study describes the use of the Student’s t-Test to qualify statistically the impact of using the Diamond (hexagonal) layout style in the electrical performance of Silicon-On-Insulator (SOI) MOSFETs. A sample of 360 SOI Metal-Oxide-Semiconductor Field Effect Transistors, n-type (nMOSFETs) were used to perform this experimental work. Regarding the SOI MOSFETs saturation drain current (I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DSsat</sub> ), the results of this study indicate that the Diamond SOI nMOSFETs for all considered angles present higher I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DSsat</sub> mean values in comparison to those measured from the standard rectangular SOI MOSFET counterparts, considering that they present the same gate areas, channel width and bias conditions (with a bias condition of 1V between the drain and source and a bias condition of 0.4V between the gate and source). For all the other α angle, that is, 36.9 °, 53.1 °, 90.0 °, 126.9 ° and 143.1 °, the DSnM I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DSsat</sub> /(W/L) mean value is higher than the CSnM I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DSsat</sub> /(W/L) mean value in an order of 51.3%, 37.6%, 40.9%, 19.0% and 10.6%, respectively. Therefore, this statistical approach can be used as a power statistical tool to validate electrical parameters and figures of merit of devices and integrated circuits regarding the nanoelectronics area.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2014 - Invited paper: Innovative Layout Styles to Boost the Mosfet Electrical Performance
- 2017 - The application of Student’s t-test in internal quality control of clinical laboratory [Crossref]