Diamond-Like Carbon Films Obtained by the Method of High-Frequency Diode Sputtering
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-09-01 |
| Journal | Journal of Communications Technology and Electronics |
| Authors | Š. Š. ŠŃŠ·Š°Š½Š¾Š², Š. Š”. ŠŠµŠ“ŠµŠ½ŠµŠµŠ² |
| Institutions | Institute of Radio-Engineering and Electronics |
| Citations | 5 |
Abstract
Section titled āAbstractāConditions for fabrication of diamond-like carbon films on the surface of oxidized single-crystalline silicon using the technique of high-frequency diode sputtering of graphite target are determined. It has been found that the deposited films have amorphous structure. The Raman spectroscopy technique has been used to show the presence of carbon phases with sp2- and sp3-hybridization, the ratio between which can be controlled by the growth conditions.