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6CCVD Research

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2018-10-10
JournalNanomaterials
AuthorsFernando Lloret, David Eon, E. Bustarret, D. AraĆŗjo
InstitutionsCentre National de la Recherche Scientifique, Material (Belgium)
Citations6

Abstract

Section titled ā€œAbstractā€

The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate <110> Burgers vector dislocations above a critical boron concentration, while the second induces <112> type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2015 - Impact of vacancy ordering on thermal transport in crystalline phase-change materials [Crossref]
  2. 2015 - TEM study of defects versus growth orientations in heavily boron-doped diamond
  3. 2014 - Critical boron-doping levels for generation of dislocations in synthetic diamond [Crossref]
  4. 2010 - Local boron doping quantification in homoepitaxial diamond structrures [Crossref]
  5. 2013 - Analysis of syntetic diamond single cristal by X-ray topography and double-cristal diffractometry [Crossref]
  6. 2014 - Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging [Crossref]
  7. 2014 - Large Ɣrea single-crystal dimamond synthesis by 915 MHz microwave plasma-assisted chemical vapor deposition [Crossref]
  8. 2015 - Mechanical properties of micro- and nanocrystalline diamond foils [Crossref]
  9. 2014 - Control of crystallographic orientation in diamond synthesis through laser resonant vibrational excitation of precursor molecules [Crossref]
  10. 2012 - Hole transport in boron delta-doped diamond structures [Crossref]

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