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6CCVD Research

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2018-10-09
JournalJournal of Applied Physics
AuthorsZ. A. K. Durrani, Mervyn Jones, Faris Abualnaja, Chen Wang, Marcus Kaestner
InstitutionsHitachi (United Kingdom), Imperial College London
Citations34

Abstract

Section titled ā€œAbstractā€

Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors, based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (āˆ¼2 eV) potential well allows electron confinement at RT. Our transistors use āˆ¼10 nm size scale Si/SiO2/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. ā€œCoulomb diamondā€ charge stability plots are measured at 290 K, with QD addition energy āˆ¼0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation āˆ¼2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2006 - Transport spectroscopy of a single dopant in a gated silicon nanowire [Crossref]
  2. 2007 - Observation of the linear stark effect in a single acceptor in Si [Crossref]
  3. 2008 - Excited-state spectroscopy of single Pt atoms in Si [Crossref]
  4. 2008 - Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET [Crossref]
  5. 2010 - Single-donor ionization energies in a nanoscale CMOS channel [Crossref]
  6. 2010 - Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor [Crossref]
  7. 2017 - Single-electron tunneling through an individual arsenic dopant in silicon [Crossref]
  8. 2016 - Electrical control of g-factor in a few-hole silicon nanowire MOSFET [Crossref]
  9. 2011 - Adiabatic charge control in a single donor atom transistor [Crossref]
  10. 2012 - A single-atom transistor [Crossref]

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