Study of the Structural and Morphological Properties of HPHT Diamond Substrates
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-10-18 |
| Journal | Semiconductors |
| Authors | P. A. Yunin, Š. Š. ŠŠ¾Š»ŠŗŠ¾Š², Yu. N. Drozdov, A. V. Koliadin, Š”. Š. ŠŠ¾ŃŠ¾Š»ŠµŠ² |
| Institutions | Institute for Physics of Microstructures, Institute of Applied Physics |
| Citations | 8 |
Abstract
Section titled āAbstractāThe morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffraction analysis. Procedures that provide a means for characterizing the substrate parameters most critical for epitaxial application with the laboratory equipment are described. It is shown that the jewelry-type characterization of diamond substrates is insufficient to assess the possibility of their use for the epitaxial growth of chemical-vapor-deposited (CVD) diamond.