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6CCVD Research

Pressure-Induced Superconductivity in Sulfur-Doped SnSe Single Crystal Using Boron-Doped Diamond Electrode-Prefabricated Diamond Anvil Cell

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2018-11-20
JournalJournal of the Physical Society of Japan
AuthorsRyo Matsumoto, Hiroshi Hara, Hiromi Tanaka, Kazuki Nakamura, Noriyuki Kataoka
InstitutionsEhime University, National Institute of Technology, Yonago College
Citations21

Abstract

Section titled ā€œAbstractā€

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2010 - CRC Handbook of Thermoelectrics

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