Stability of diamond/Si bonding interface during device fabrication process
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-11-26 |
| Journal | Applied Physics Express |
| Authors | Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu |
| Institutions | Saga University, Osaka City University |
| Citations | 43 |
Abstract
Section titled āAbstractāDiamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5 nm thick SixCx-1 layer was formed at the interface with annealing at 1000 Ā°C. The layer was formed by the inter-diffusion of carbon and Si atoms near the bonding interface, which plays a role of residual stress relaxation between diamond and Si. These results suggest that diamond/Si heterostructures are applicable for combining diamond devices with Si LSI.