An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-12-05 |
| Journal | IEEE Electron Device Letters |
| Authors | Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura, Kozo Makiyama, Junji Kotani |
| Institutions | Fujitsu (Japan) |
| Citations | 78 |
Abstract
Section titled āAbstractāThis letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm. A quaternary In-added InAlGaN barrier enabled both the large current of over 1 A/mm and the high breakdown voltage of 257 V. The drain bias was increased as high as 100 V for the S-band load-pull measurement, leading to high power operation. Furthermore, the thermal resistance was reduced by 60%, from 18.8 to 7.2Ā°C/W, by employing the SiC/diamond heat spreader. This large heat dissipation effect was clearly observed in the output power density for the load-pull measurement. Our results demonstrate that the GaN HEMT with an In-added barrier layer is promising not only for millimeter-wave applications but also for high output power microwave amplifiers.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- **** - Advanced HEMTs and MMICs technologies for next generation millimeter-wave amplifiers
- **** - High-power-density GaN HEMT amplifiers for millimeter-wave applications
- **** - Recent progress in GaN-on-diamond device technology