p-Diamond as candidate for plasmonic terahertz and far infrared applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-12-17 |
| Journal | Applied Physics Letters |
| Authors | M. S. Shur, S. Rudin, G. Rupper, Tony Ivanov |
| Institutions | Rensselaer Polytechnic Institute, Adelphi Laboratory Center |
| Citations | 28 |
Abstract
Section titled āAbstractāHigh values of the hole mobility, low contact resistance, and high hole sheet densities in diamond two-dimensional hole gas make p-diamond field effect transistors superb candidates for implementing high temperature plasmonic sub-terahertz, terahertz, and far infrared devices. Our calculations show that p-diamond sub-THz transistors are viable contenders, especially for applications in the 200 to 600 GHz atmospheric window which are of special interest for the beyond 5 G sub-THz communications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1996 - Handbook of Semiconductor Material Parameters, Si, Ge, C (diamond), GaAs, GaP, GaSb, InAs, InP, InSb [Crossref]
- 2018 - Power Electronics Device Applications of Diamond Semiconductors