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Crystal growth and CMP of 1 inch heteroepitaxial diamond substrates

MetadataDetails
Publication Date2019-01-01
AuthorsG. Turri, Koji Koyama, Yuki Kawamata, Seong‐Woo Kim

Heteroepitaxial diamond growth method and Chemical Mechanical Planarization (CMP) technologies have been developed. Large area heteroepitaxial diamond with 1-inch diameter was successfully demonstrated on Sapphire wafer. CMP was applied to the heteroepitaxial diamond and its effect was evaluated by the implanted MOSFET device.