Gate defined quantum dot realized in a single crystalline InSb nanosheet
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-01-14 |
| Journal | Applied Physics Letters |
| Authors | Jianhong Xue, Yuanjie Chen, Dong Pan, JiāYin Wang, Jianhua Zhao |
| Institutions | Peking University, Beijing Academy of Quantum Information Sciences |
| Citations | 15 |
Abstract
Section titled āAbstractāA single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.