High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-01-01 |
| Journal | IEEE Journal of the Electron Devices Society |
| Authors | Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide |
| Institutions | National Institute for Materials Science |
| Citations | 11 |
Abstract
Section titled āAbstractāPlanar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate. The ratio between the height of the lateral side and the width of planar side for each fin of the triple-gate MOSFETs was as high as 1.45. The leakage current densities at an electrical field strength of -1.5 MV cm<sup>-1</sup> for both the planar-type and triple-gate fin-type MOSFETs were around 10<sup>-6</sup> A cm<sup>-2</sup>. Both MOSFETs operated well with on/off ratios as high as 10<sup>10</sup>. The current output maximum normalized by the gate width of the triple-gate H-diamond MOSFET was -271.3 mA mm<sup>-1</sup>, almost double that of the planar-type MOSFET. The results of this paper are expected to pave the way towards the fabrication of high current out and downscaled H-diamond MOSFETs.