High Performance ${beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-01-01 |
| Journal | IEEE Journal of the Electron Devices Society |
| Authors | Jinhyun Noh, Peide D. Ye, Sami Alajlouni, Marko J. Tadjer, James C. Culbertson |
| Institutions | United States Naval Research Laboratory, Purdue University West Lafayette |
| Citations | 59 |
Abstract
Section titled āAbstractāTo suppress severe self-heating under high power density, we herein demonstrate top-gate nano-membrane β-gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) field effect transistors on a high thermal conductivity diamond substrate. The devices exhibit enhanced performance, with a record high maximum drain current of 980 mA/mm for top-gate β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors and 60% less temperature increase from reduced self-heating, compared to the device on a sapphire substrate operating under identical power density. With improved heat dissipation, β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors on a diamond substrate are validated using an ultrafast high-resolution thermoreflectance imaging technique, Raman thermography, and thermal simulations.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2019 - Thermal conductance across $\beta $ -Ga2O3-diamond van der Waals heterogeneous interfaces