Effects of Monopolar Resistive Switching in Thin Diamond-Like Carbon Layers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-02-01 |
| Journal | Journal of Experimental and Theoretical Physics Letters |
| Authors | Š. Š”. ŠŠµŠ“ŠµŠ½ŠµŠµŠ², Š. Š. ŠŃŠ·Š°Š½Š¾Š², V. V. Rylkov |
| Institutions | Institute of Radio-Engineering and Electronics |
| Citations | 5 |
Abstract
Section titled āAbstractāThe current-voltage characteristics have been studied for Pt/diamond-like C/Pt structures based on thin (20 nm) diamond-like carbon layers, in which the ratio between carbon phases with sp2 and sp3 hybridization is controlled by the growth conditions of the layers by the high-frequency diode sputtering method. The effects of resistive switching from the initial high-resistive state to a low-resistive one at an applied voltage of V ~ 3 V and reverse switching at V ~ 0 V are detected. These effects are symmetric with respect to change in voltage polarity and are explained by the change in the hybridization type of local carbon regions, which causes switching from the high- to low-resistive state in strong (~106 V/cm) fields because of sp3 ā sp2 transitions and reverse switching in the absence of the field. The high-to-low resistance ratio reaches ~50.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications