Formation of GeV, SiV, and NV Color Centers in Single Crystal Diamond Needles Grown by Chemical Vapor Deposition
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-03-07 |
| Journal | physica status solidi (b) |
| Authors | Sergei Malykhin, Yuliya Mindarava, Š . Š . ŠŃŠ¼Š°Š³ŠøŠ»Š¾Š², Anton S. Orekhov, Fedor Jelezko |
| Institutions | Lomonosov Moscow State University, University of Eastern Finland |
| Citations | 14 |
Abstract
Section titled āAbstractāHerein the color centers formation in diamond crystallites of pyramidal shape grown by chemical vapor deposition (CVD) is described. The individual crystallites are extracted from polycrystalline films grown on silicon substrates. The siliconāvacancy (SiV), germaniumāvacancy (GeV), and nitrogenāvacancy (NV) centers are created by introducing corresponding precursors from substrate material, gaseous nitrogen, and thermally evaporated germanium added during CVD. Some amount of NV centers detected in all types of the diamond crystallites is assigned to uncontrollable presence of nitrogen in the CVD reactor. The low temperature photoluminescence spectra indicate presence of ensembles of SiV centers in diamond structure. The SiV centers are concentrated predominantly at apexes of the diamond crystallites located at substrate surface. Intense growth of CN radicals in plasmaāactivated gas environment during CVD process is detected after nitrogen gas addition. The crystallites obtained with the nitrogen addition demonstrate significant variation of their pyramid angle. The photoluminescence spectra of crystallites grown with nitrogen addition demonstrate increase of both negatively and neutrally charged states of NV color center. The GeV centers are created via thermal evaporation of pure Ge during CVD growth. The photoluminescence spectra of the crystallites grown with Ge addition demonstrate presence of GeV color centers ensemble.