The Compacts of Boron-Doped Synthetic Diamond - Electrochemical Properties of Samples with Extremely High Doping Level
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-03-01 |
| Journal | Russian Journal of Electrochemistry |
| Authors | Yu. V. Pleskov, M. D. Šrotova, Š. Š. ŠŠŗŠøŠ¼Š¾Š² |
| Institutions | Frumkin Institute of Physical Chemistry and Electrochemistry, Institute for High Pressure Physics |
| Citations | 2 |
Abstract
Section titled āAbstractāCompacts of boron-doped synthetic diamond with extremely high doping level are obtained at a pressure of 8-9 GPa and temperature about 2500 K from graphite-boron carbide (5 or 7%) mixtures. The boron content in the diamond estimated by the diamond lattice parameter (0.3573-0.3575 and 0.3576-0.3578 nm, respectively) is about 1-3% and 3-4%, respectively. Thus obtained compacts showed the highest electroactivity of all known diamond, diamond-based, and diamond-like materials (by example of anodic chlorine evolution reaction). In compliance with the earlier found general trend for all known diamond, diamond-based, and diamond-like materials, with the increasing of the compact doping level some increase in the materialās electroactivity also occurs. The heavily boron-doped diamond compacts can be used as indicator electrodes in the electroanalytical determination of ethylenediaminetetraacetic acid in aqueous solutions (by its electrooxidation current).
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2003 - Electrochemistry of Diamond
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- 2015 - Topics in Applied Physics