GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-04-19 |
| Journal | IEEE Electron Device Letters |
| Authors | Marko J. Tadjer, Travis J. Anderson, Mario G. Ancona, Peter E. Raad, Pavel L. Komarov |
| Institutions | United States Naval Research Laboratory, University of California, Los Angeles |
| Citations | 88 |
Abstract
Section titled “Abstract”Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si substrate. Crucial to the process is a ~30 nm thick SiN interlayer that has been optimized for thermal resistance. The reductions obtained in self-heating have been quantified by transient thermoreflectance imaging and interpreted using 3D numerical simulation. With a DC power dissipation level of 56 W/mm, the measured average and maximum temperatures in the gate-drain access region were 176 °C and 205 °C, respectively.